| PART |
Description |
Maker |
| GT40J121 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| SG50N06D3S SG50N06D2S |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
ETC[ETC]
List of Unclassifed Manufacturers
|
| IXBH16N170 IXBT16N170 |
Discrete IGBTs
|
IXYS
|
| SG200N06S |
Discrete IGBTs
|
Sirectifier Global Corp...
Sirectifier Semiconductors
Sirectifier Semiconduct...
|
| IRGBCX0U IRGPCX0U IRGPF50U |
(IRGxxxx) Discrete IGBTs
|
International Rectifier
|
| IXBN75N170A |
Discrete IGBTs
BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| 2SJ221 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type
Silicon P-Channel MOS FET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SH29 |
IGBTs
Silicon N Channel IGBT High Speed Power Switching
|
Hitachi Semiconductor
Hitachi,Ltd.
|
